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| U430/431 Vishay Siliconix Matched N-Channel Pairs PRODUCT SUMMARY Part Number U430 U431 VGS(off) (V) -1 to -4 -2 to -6 V(BR)GSS Min (V) -25 -25 gfs Min (mS) 10 10 IG Typ (pA) -15 -15 jVGS1 - VGS2j Typ (mV) 25 25 FEATURES D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 15 pA Low Noise High CMRR: 75 dB BENEFITS D D D D D D Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters DESCRIPTION The U430/431 are matched JFET pairs assembled in a TO-78 package. These devices offer good power gain even at frequencies beyond 250 MHz. The TO-78 package is available with full military processing (see Military Information). For similar products, see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-78 S1 1 7 S2 G1 2 6 G2 3 D1 4 Case Top View 5 D2 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70249 S-04031--Rev. E, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 U430/431 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U430 U431 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 5 mA -35 -25 -1 12 -4 30 -150 -150 -25 V -2 24 -6 60 -150 -150 mA pA nA pA nA 1 1 V -5 -10 -15 -10 0.8 Gate Operating Current Gate-Source Forward Voltage IG VGS(F) TA = 150_C IG = 10 mA , VDS = 0 V Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 10 V, ID = 10 mA , f = 1 kHz gos Ciss VGS = -10 V, VDS = 0 V, f = 1 MHz Crss en VDS = 10 V, ID = 10 mA f = 100 Hz 2 6 2.5 2.5 nV Hz 100 4.5 250 5 250 5 pF 15 10 10 mS mS High Frequency Common-Source Forward Transconductance Common-Source Output Conductance Power-Match Source Admittance gfs gos gig VDS = 10 V, ID = 10 mA f = 100 MHz 14 0.13 12 mS Matching Differential Gate-Source Voltage Saturation Drain Current Ratioc Transconductance Ratioc Gate-Source Cutoff Voltage Ratioc Differential Gate Current Common Mode Rejection Ratio |V GS1-V GS2| I DSS1 I DSS2 gfs1 gfs2 V GS(off)1 V GS(off)2 |I G1-I G2| CMRR VDG = 10 V, ID = 10 mA VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 10 mA, f = 1 kHz VDS = 10 V, ID = 1 nA VDG = 10 V, ID = 5 mA VDG = 5 to 10 V, ID = 10 mA 25 0.95 0.95 0.9 0.9 1 1 0.9 0.9 1 1 mV 0.95 -2 75 0.9 1 0.9 1 pA dB NZBD Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 Document Number: 70249 S-04031--Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 100 IDSS - Saturation Drain Current (mA) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 50 gfs - Forward Transconductance (mS) 10 nA Gate Leakage Current TA = 125_C IG @ ID = 10 mA 200 mA 80 40 1 nA IG - Gate Leakage 60 gfs 40 IDSS 30 100 pA IGSS @ 125_C 200 mA 20 10 pA 10 mA TA = 25_C 1 pA IGSS @ 25_C 20 10 0 0 -3 -4 -2 VGS(off) - Gate-Source Cutoff Voltage (V) -1 -5 0 0.1 pA 0 3 4 9 12 15 VDG - Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz gfs - Forward Transconductance (mS) gos - Output Conductance (S) 80 240 16 300 20 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz TA = -55_C 12 25_C 8 125_C 60 180 40 rDS gos 20 120 60 4 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 0.1 1 ID - Drain Current (mA) 10 Transconductance vs. Gate-Source Voltage 30 VGS(off) = -1.5 V gfs - Forward Transconductance (mS) 24 TA = -55_C 25_C 18 125_C 12 VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) 40 50 Transconductance vs. Gate-Source Voltage VGS(off) = -3 V VDS = 10 V f = 1 kHz TA = -55_C 30 25_C 20 125_C 10 6 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Document Number: 70249 S-04031--Rev. E, 04-Jun-01 www.vishay.com 8-3 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 20 VGS(off) = -1.5 V 16 ID - Drain Current (mA) VGS = 0 V -0.2 V ID - Drain Current (mA) 40 -0.4 V 30 -0.8 V -1.2 V -1.6 V 10 -2.0 V -2.4 V 0 2 4 6 8 10 50 VGS(off) = -3 V VGS = 0 V Output Characteristics 12 -0.4 V 8 -0.6 V -0.8 V 20 4 -1.0 V 0 0 2 4 6 8 10 0 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Output Characteristics 15 VGS(off) = -1.5 V 12 ID - Drain Current (mA) -0.2 V 9 -0.4 V 6 -0.6 V 3 -0.8 V -1.0 V 0 0 0.2 0.4 0.6 0.8 1 0 0 0.2 ID - Drain Current (mA) VGS = 0 V 24 30 Output Characteristics VGS(off) = -3 V VGS = 0 V 18 -0.4 V -0.8 V -1.2 V 12 -1.6 V 6 -2.0 V -2.4 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Transfer Characteristics 30 VGS(off) = -1.5 V 24 ID - Drain Current (mA) ID - Drain Current (mA) VDS = 10 V f = 1 kHz 80 100 Transfer Characteristics VGS(off) = -3 V VDS = 10 V f = 1 kHz 18 TA = -55_C 25_C 60 TA = -55_C 25_C 12 40 6 125_C 20 125_C 0 0 -0.4 -0.8 -1.2 -1.6 -2 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) www.vishay.com 8-4 Document Number: 70249 S-04031--Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current 100 rDS(on) - Drain-Source On-Resistance ( ) TA = 25_C 80 VGS(off) = -1.5 V 60 AV - Voltage Gain 80 100 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID AV + g fs R L Circuit Voltage Gain vs. Drain Current 40 -3 V 20 40 VGS(off) = -1.5 V 20 -3 V 0 1 10 ID - Drain Current (mA) 100 0 0.1 1 ID - Drain Current (mA) 10 Common-Source Input Capacitance vs. Gate-Source Voltage 15 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz C iss - Input Capacitance (pF) 12 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz 8 9 VDS = 0 V 6 VDS = 0 V 4 6 3 5V 2 5V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 100 Input Admittance vs. Frequency 100 VDG = 10 V ID = 10 mA Common-Gate Forward Admittance vs. Frequency VDG = 10 V ID = 10 mA Common-Gate -gfg 10 gig 10 (mS) (mS) big bfg 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Document Number: 70249 S-04031--Rev. E, 04-Jun-01 www.vishay.com 8-5 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance vs. Frequency 10 VDG = 10 V ID = 10 mA Common-Gate 100 VDG = 10 V ID = 10 mA Common-Gate bog 1 (mS) (mS) -brg +grg 0.1 -grg 10 Output Admittance vs. Frequency gog 1 0.01 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency 20 VDS = 10 V 120 150 Output Conductance vs. Drain Current VGS(off) = -3 V gos - Output Conductance (S) VDS = 10 V f = 1 kHz en - Noise Voltage nV / Hz 16 ID = 1 mA 12 90 TA = -55_C 8 60 25_C 30 125_C 0 4 ID = 10 mA 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 www.vishay.com 8-6 Document Number: 70249 S-04031--Rev. E, 04-Jun-01 |
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